DocumentCode
472810
Title
High Pressure Oxidation for Thin Gate Insulator Process
Author
Hirayama, M. ; Miyoshi, H. ; Tsubouchi, N. ; Abe, H.
Author_Institution
Computer Development Laboratory, Mitsubishi Electric Co. Itami, Hyoqo 664 Japan
fYear
1981
fDate
9-11 Sept. 1981
Firstpage
74
Lastpage
75
Keywords
Dielectric breakdown; Dielectric thin films; Dielectrics and electrical insulation; Laboratories; Large scale integration; Oxidation; Research and development; Semiconductor films; Temperature distribution; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location
Maui, HI, USA
Type
conf
Filename
4480533
Link To Document