Title :
Fabrication of Si-MOS Fet Using NTD Si as Semi-Insulating Substrate
Author :
Ho, Vu Q. ; Sugano, Takuo
Author_Institution :
Department of Electronic Engineering the University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan
Keywords :
Annealing; Conductivity; FETs; Gold; Neutrons; Optical device fabrication; Optical pulses; Plasma applications; Plasma temperature; Switches;
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
