DocumentCode :
472818
Title :
Two-Dimensional Process Modeling for High Density (LOCOS) Technology
Author :
Dutton, Robert W. ; Mei, Len ; Chin, Daeje ; Kump, Mike
Author_Institution :
Integrated Circuits Laboratory Stanford University Stanford, CA 94305
fYear :
1981
fDate :
9-11 Sept. 1981
Firstpage :
90
Lastpage :
91
Keywords :
Analytical models; Boron; Etching; Impurities; Integrated circuit modeling; MOS devices; Oxidation; Plasma applications; Plasma simulation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1981. Digest of Technical Papers. Symposium on
Conference_Location :
Maui, HI, USA
Type :
conf
Filename :
4480541
Link To Document :
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