• DocumentCode
    472829
  • Title

    The Use of Electron Beam Annealing to Reduce Contact Resistance for VLSI

  • Author

    Chen, John Y. ; Rensch, David B.

  • Author_Institution
    Hughes Research Laboratories Malibu, CA 90265
  • fYear
    1982
  • fDate
    1-3 Sept. 1982
  • Firstpage
    22
  • Lastpage
    23
  • Keywords
    Annealing; CMOS technology; Conductivity; Contact resistance; Electron beams; Furnaces; Implants; Isothermal processes; Laser beams; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1982. Digest of Technical Papers. Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • Filename
    4480560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472829