DocumentCode
472835
Title
Self-Aligned-Contact Technology for High Density MOS VLSI
Author
Sakamoto, Mitsuru ; Kudoh, Osamu ; Yamamoto, Hirohiko ; Sekido, Kenji
Author_Institution
Nippon Electric Co., Ltd. Sagamihara, Kanagawa 229, Japan
fYear
1982
fDate
1-3 Sept. 1982
Firstpage
34
Lastpage
37
Keywords
Breakdown voltage; Capacitance; Dielectric films; Electrodes; Etching; Oxidation; Process design; Random access memory; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location
Oiso, Japan
Type
conf
Filename
4480566
Link To Document