Title :
A Comparison of HCMOS-III and HMOS-III Technologies for 64K or Larger Static RAMS
Author_Institution :
Motorola, MOS IC Division 3501 Ed Bluestein Blvd, Austin, Texas 78721
Keywords :
Circuits; Degradation; Dielectrics; Etching; Implants; Lithography; P-n junctions; Passivation; Resists; Threshold voltage;
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
