• DocumentCode
    472863
  • Title

    Electron Beam Testing or VLSIs

  • Author

    Ishikawa, M. ; Koike, H. ; Sekine, M.

  • Author_Institution
    Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
  • fYear
    1982
  • fDate
    1-3 Sept. 1982
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    Electron beam testing has many advantages, such as the electron beam diameter of the order of micrometers or less, no loading capacitance, high operating frequencies and nondestructive testing. Therefore, if we choose appropriate acceleration voltages to avoid the charging of devices, it will be a very useful tool for VLSI internal measurements. And it is possible to reduce the turnaround time of redesigns and to get much information for optimizing the design in a shorter time.
  • Keywords
    Capacitance; Circuit testing; Delay; Electron beams; Laboratories; Large scale integration; Mechanical variables measurement; Microcomputers; Probes; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1982. Digest of Technical Papers. Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • Filename
    4480594