DocumentCode
472863
Title
Electron Beam Testing or VLSIs
Author
Ishikawa, M. ; Koike, H. ; Sekine, M.
Author_Institution
Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
fYear
1982
fDate
1-3 Sept. 1982
Firstpage
96
Lastpage
97
Abstract
Electron beam testing has many advantages, such as the electron beam diameter of the order of micrometers or less, no loading capacitance, high operating frequencies and nondestructive testing. Therefore, if we choose appropriate acceleration voltages to avoid the charging of devices, it will be a very useful tool for VLSI internal measurements. And it is possible to reduce the turnaround time of redesigns and to get much information for optimizing the design in a shorter time.
Keywords
Capacitance; Circuit testing; Delay; Electron beams; Laboratories; Large scale integration; Mechanical variables measurement; Microcomputers; Probes; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location
Oiso, Japan
Type
conf
Filename
4480594
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