DocumentCode :
472864
Title :
The Comprehensive Model of Oxidation-Enhanced Diffusion
Author :
Sakamoto, K. ; Nishi, K. ; Miyoshi, T.
Author_Institution :
OKI Electric Industry Company, Ltd. 550-1 Higashiasakawa, Hachioji, Tokyo 193, Japan
fYear :
1982
fDate :
1-3 Sept. 1982
Firstpage :
98
Lastpage :
99
Keywords :
Crystallization; Electrical resistance measurement; Ellipsometry; Impurities; Oxidation; Semiconductor device modeling; Semiconductor process modeling; Silicon; Surface fitting; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1982. Digest of Technical Papers. Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
Filename :
4480595
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472864
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