Reactive Ion Etching of Poly-Si Employing Cl2 and Cl2/H2 Systems

Author

Watanabe, T. ; Shibagaki, M. ; Horiike, Y.

Author_Institution

Toshiba Corporation, Kawasaki, Japan

fYear

1982

fDate

1-3 Sept. 1982

Firstpage

104

Lastpage

105

Keywords

Anisotropic magnetoresistance; Control systems; Effluents; Etching; Fluid flow; Gases; Hydrogen; Pressure control; Voltage; Weight control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1982. Digest of Technical Papers. Symposium on

Conference_Location

Oiso, Japan

Type

Filename

4480598

Link To Document