• DocumentCode
    472891
  • Title

    High Speed CMOS Devices Fabricated on Laser-Recrystallized Polycrystalline Silicon Island

  • Author

    Akasaka, Y. ; Nishimura, T. ; Nakata, H.

  • Author_Institution
    LSI Research and Development Laboratory Mitsubishi Electric Corporation 4-1, Mizuhara Itami, 664, Japan
  • fYear
    1983
  • fDate
    13-15 Sept. 1983
  • Firstpage
    48
  • Lastpage
    49
  • Keywords
    Boron; Grain boundaries; Large scale integration; MOSFETs; Power lasers; Propagation delay; Ring oscillators; Silicon on insulator technology; Threshold voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1983. Digest of Technical Papers. Symposium on
  • Conference_Location
    Maui, HI, USA
  • Print_ISBN
    4-930813-05-0
  • Type

    conf

  • Filename
    4480631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472891