• DocumentCode
    472909
  • Title

    Interfacial Oxidation of Ta2O5-Si Systems for High-Density D-RAM

  • Author

    Kato, T. ; Ito, T. ; Taguchi, M. ; Nakamura, T. ; Ishikawa, H.

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi 1677 Ono, Atsugi 243-01, Japan
  • fYear
    1983
  • fDate
    13-15 Sept. 1983
  • Firstpage
    86
  • Lastpage
    87
  • Abstract
    The authors developed a new method of oxidation in which oxidizing species are applied through Ta2O5 films. Effective breakdown fields of the developed films are sharply distributed around 17 MV/cm. The developed films with an upper electrode of MoSix (x¿2) will be useful to the production of ultra-high density D-RAM.
  • Keywords
    Annealing; Capacitors; Dielectric substrates; Dielectric thin films; Diodes; Electrodes; Leakage current; Material storage; Oxidation; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1983. Digest of Technical Papers. Symposium on
  • Conference_Location
    Maui, HI, USA
  • Print_ISBN
    4-930813-05-0
  • Type

    conf

  • Filename
    4480649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472909