DocumentCode
47292
Title
Toward Wafer Scale Inductive Characterization of Spin-Transfer Torque Critical Current Density of Magnetic Tunnel Junction Stacks
Author
Sievers, S. ; Liebing, N. ; Serrano-Guisan, S. ; Ferreira, R. ; Paz, E. ; Caprile, A. ; Manzin, A. ; Pasquale, M. ; Skowronski, W. ; Stobiecki, T. ; Rott, K. ; Reiss, G. ; Langer, J. ; Ocker, B. ; Schumacher, H.W.
Author_Institution
Phys.-Tech. Bundesanstalt, Braunschweig, Germany
Volume
51
Issue
1
fYear
2015
fDate
Jan. 2015
Firstpage
1
Lastpage
4
Abstract
We explore the prospects of wafer-scale inductive probing of the critical current density jc0 for spin-transfer torque (STT) switching of CoFeB/MgO/CoFeB magnetic tunnel junctions with varying MgO thickness. From inductive measurements, magnetostatic parameters and effective damping are derived and jc0 is calculated based on STT equations. The inductive values compare well with the values derived from current-induced switching measurements on individual nanopillars. Using a wafer-scale inductive probe head could enable wafer probe station-based metrology of jc0 in the future.
Keywords
boron alloys; cobalt alloys; critical currents; damping; iron alloys; magnesium compounds; magnetic switching; magnetic tunnelling; magnetisation reversal; CoFeB-MgO-CoFeB; STT equations; critical current density; current-induced switching measurements; damping; inductive measurements; magnetic tunnel junction stacks; magnetostatic parameters; spin-transfer torque critical current density; spin-transfer torque switching; wafer probe station-based metrology; wafer scale inductive characterization; wafer-scale inductive probe head; wafer-scale inductive probing; Damping; Magnetic resonance; Magnetic tunneling; Magnetization; Magnetomechanical effects; Magnetostatics; Materials; Critical current density; magnetic random access memory (MRAM); spin-transfer torque (STT);
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2014.2357808
Filename
7029231
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