DocumentCode

472937

Title

High Performance Silicided Source/Drain CMOSFET Without Parasitic Effects

Author

Kakumu, Masakazu ; Hashimoto, Kazuhiko

Author_Institution

Semiconductor Device Engineering Laboratory Toshiba Corporation; Kawasaki Japan

fYear

1984

fDate

10-12 Sept. 1984

Firstpage

34

Lastpage

35

Keywords

CMOS process; CMOS technology; CMOSFETs; Contact resistance; Implants; Impurities; MOSFETs; Silicidation; Silicides; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1984. Digest of Technical Papers. Symposium on

Conference_Location

San Diego, CA, USA

Print_ISBN

4-930813-08-5

Type

conf

Filename

4480686