Integrated Guided-Wave Photodiode Using Through-Absorber Quantum-Well-Intermixing

Author

Skogen, E.J. ; Vawter, G. Allen ; Tauke-Pedretti, Anna ; Alford, Charles R. ; Overberg, Mark E. ; Sullivan, Charles T.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

25

Issue

17

fYear

2013

fDate

Sept.1, 2013

Firstpage

1684

Lastpage

1686

Abstract

A high-speed, high-saturation power photodiode compatible with a relatively simple monolithic integration process is described. The detector is comprised of an intrinsic bulk absorption layer, an electron drift region, and a field termination layer, and is grown above a main waveguide core comprised of a number of quantum wells, which are used as the active region of a phase modulator. Through-absorber quantum-well-intermixing is used to blue-shift the bandedge of the underlying quantum wells, reducing the optical losses of that material. The detectors demonstrate quantum efficiency, input saturation power, and 3-dB bandwidth of 50 GHz.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical losses; optical modulation; optical waveguides; phase modulation; photodetectors; photodiodes; semiconductor quantum wells; spectral line shift; InGaAs; blue shift; bulk absorption layer; electron drift region; field termination layer; frequency 50 GHz; high-speed high-saturation power photodiode; input saturation power; integrated guided-wave photodiode; optical losses; phase modulator; photodetector; quantum efficiency; simple monolithic integration process; through-absorber quantum-well-intermixing; waveguide core; Absorption; Optical buffering; Optical device fabrication; Optical saturation; Optical waveguides; Photodiodes; Quantum well devices; Ion implantation; integrated optoelectronics; photodiodes; quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2273754

Filename

6562781