• DocumentCode
    47391
  • Title

    Development of a Semiempirical Compact Model for DC/AC Cell Operation of {\\rm HfO}_{\\rm{x}} -Based ReRAMs

  • Author

    Jinwoo Noh ; Minseok Jo ; Chang Yong Kang ; Gilmer, D. ; Kirsch, P. ; Lee, Jong Chul ; Byoung Hun Lee

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • Volume
    34
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    1133
  • Lastpage
    1135
  • Abstract
    A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfOx-based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOx-based ReRAM devices.
  • Keywords
    hafnium compounds; random-access storage; DC/AC cell operation; HfOx; HfOx-based ReRAM; RESET operation; current crowding effect; filament-type HfOx; ion migration model; resistance change random access memory; semiempirical compact model; time-dependent device characteristic; Data models; Hafnium compounds; Integrated circuit modeling; Materials; Resistance; SPICE; Switches; ${rm HfO}_{rm{x}}$ insulator layer; ion migration model; resistance change random access memory (ReRAM); semiempirical model;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2271831
  • Filename
    6562784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=47391