DocumentCode
474063
Title
Emission of terahertz radiation from an interdigitated grating gates high electron-mobility transistors
Author
Meziani, Y.M. ; Otsuji, T. ; Sano, E.
Author_Institution
Tohoku Univ., Sendai
fYear
2007
fDate
2-9 Sept. 2007
Firstpage
466
Lastpage
467
Abstract
New doubly interdigitated grating gate high- electron mobility transistor (HEMT) was illuminated at room temperature by a 1.5-mum CW laser. A clear emission of the terahertz radiation has been detected using a Silicon bolometer cooled down to 4.2 K and placed in the front of the sample. The observed signal was related to the self oscillation of the plasma waves in our new HEMT device.
Keywords
bolometers; high electron mobility transistors; laser beam effects; plasma waves; submillimetre waves; CW laser; high electron-mobility transistors; interdigitated grating gates; plasma waves; silicon bolometer; terahertz radiation; Bolometers; Gratings; HEMTs; Laser beams; MODFETs; Optical filters; Plasma temperature; Plasma waves; Plasmons; Silicon; Emission of terahertz radiations; HEMT; grating gates device; plasma waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1438-3
Type
conf
DOI
10.1109/ICIMW.2007.4516584
Filename
4516584
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