DocumentCode :
474063
Title :
Emission of terahertz radiation from an interdigitated grating gates high electron-mobility transistors
Author :
Meziani, Y.M. ; Otsuji, T. ; Sano, E.
Author_Institution :
Tohoku Univ., Sendai
fYear :
2007
fDate :
2-9 Sept. 2007
Firstpage :
466
Lastpage :
467
Abstract :
New doubly interdigitated grating gate high- electron mobility transistor (HEMT) was illuminated at room temperature by a 1.5-mum CW laser. A clear emission of the terahertz radiation has been detected using a Silicon bolometer cooled down to 4.2 K and placed in the front of the sample. The observed signal was related to the self oscillation of the plasma waves in our new HEMT device.
Keywords :
bolometers; high electron mobility transistors; laser beam effects; plasma waves; submillimetre waves; CW laser; high electron-mobility transistors; interdigitated grating gates; plasma waves; silicon bolometer; terahertz radiation; Bolometers; Gratings; HEMTs; Laser beams; MODFETs; Optical filters; Plasma temperature; Plasma waves; Plasmons; Silicon; Emission of terahertz radiations; HEMT; grating gates device; plasma waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
Type :
conf
DOI :
10.1109/ICIMW.2007.4516584
Filename :
4516584
Link To Document :
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