Soft-Error in SRAM at Ultra-Low Voltage and Impact of Secondary Proton in Terrestrial Environment

Author

Uemura, Toshifumi ; Kato, Toshihiko ; Matsuyama, Hiroki ; Hashimoto, Mime

Author_Institution

Fujitsu Semicond. Ltd., Akiruno, Japan

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4232

Lastpage

4237

Abstract

This paper presents soft-error measurement results through neutron and alpha irradiation tests and simulation in SRAM at ultra-low voltages, down to 0.19 V. Soft-error-rate at 0.19 V is higher than at 1.0 V by two orders of magnitude. This measurement result supported by simulation clarifies that direct ionization from secondary protons generated by nuclear reaction with neutron collision contribute to a dramatic increase in SRAM soft-error-rate at ultra-low voltages in terrestrial environment.

Keywords

SRAM chips; ionisation; neutron effects; proton effects; radiation hardening (electronics); alpha irradiation tests; direct ionization; neutron collision; neutron irradiation tests; nuclear reaction; secondary proton impact; soft-error measurement; terrestrial environment; ultra-low voltage; voltage 0.19 V; Ionization; Low-power electronics; Neutrons; Radiation effects; SRAM chips; Alpha; SRAM; low voltage; multiple-bit-upset; neutron; single event; soft-error;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2291274

Filename

6677618