THz electroluminescence from strained GaAsN layers doped with shallow acceptors

Author

Andrianov, A.V. ; Zakhar, A.O. ; Shalygin, V.A. ; Vorob´ev, L.E. ; Firsov, D.A. ; Panevin, V.Yu. ; Sofronov, A.N. ; Kozlov, D.V. ; Egorov, A.Yu. ; Gladyshev, A.G. ; Bondarenko, O.V. ; Ustinov, V.M. ; Zinov, N.N.

Author_Institution

Ioffe Phys. Tech. Inst., St. Petersburg

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

619

Lastpage

620

Abstract

We report on a new electrically pumped terahertz (THz) source based on GaAs_1-xN_x/GaAs heterojunction doped with shallow (Be) acceptors. The spectra of observed efficient THz electroluminescence in the spectral range of 2.4-6.0 THz (10-25 meV) suggest the scheme of intra-center optical transitions employing resonant and localized energy levels of acceptor states split by built-in stress at the heterojunction interface.

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; gallium compounds; semiconductor heterojunctions; submillimetre wave generation; submillimetre wave spectra; wide band gap semiconductors; GaAsN:Be-GaAs; electrically pumped terahertz source; electron volt energy 10 meV to 25 meV; frequency 2.4 THz to 6 THz; heterojunction interface; intracenter optical transitions; resonant-localized energy levels; shallow acceptors; strained layers; terahertz electroluminescence; Bonding; Electroluminescence; Gallium arsenide; Heterojunctions; Microstructure; Optical pumping; Quantum cascade lasers; Resonance; Stimulated emission; Stress; III-V semiconductors; Terahertz; dilute nitrides; emitters; heterojunctions; infrared; optical properties of low-dimensional structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516652

Filename

4516652