Temperature dependent carrier dynamics of InAs/GaAs quantum dots probed by terahertz time-domain spectroscopy

Author

Oh, S.J. ; Maeng, I.H. ; Kim, H.M. ; Cho, N.K. ; Song, J.D. ; Choi, W.J. ; Lee, J.I. ; Son, J.-H.

Author_Institution

Yonsei Univ., Seoul

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

769

Lastpage

770

Abstract

We have utilized the terahertz time-domain spectroscopy to investigate the temperature dependent carrier dynamics n-type modulation-doped InAs/GaAs quantum dots and estimated the total number of electrons captured by the quantum dots from 10 K to 290 K. The absorption of the sample with quantum dots decrease monotonically as the temperature is lowered because quantum dots capture more free carriers at lower temperatures, while the absorption of the sample without quantum dots is the highest at 100 K because the electron mobility is the highest at that temperature.

Keywords

III-V semiconductors; electron mobility; gallium arsenide; indium compounds; semiconductor quantum dots; submillimetre wave spectra; electron mobility; modulation-doped quantum dots; temperature 10 K to 20 K; temperature dependent carrier dynamics; terahertz time-domain spectroscopy; Absorption; EMP radiation effects; Electron mobility; Epitaxial layers; Gallium arsenide; Quantum dot lasers; Quantum dots; Spectroscopy; Temperature dependence; Time domain analysis; carrier dynamics; quantum dots; terahertz; terahertz time-domain spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516722

Filename

4516722