Fast quasi-optical phase shifter based on induced photoconductivity in silicon

Author

Denisov, G.G. ; Kocharovsky, V.V. ; Kuzikov, S.V. ; Parshin, V.V. ; Peskov, N.Yu. ; Stepanov, A.N. ; Sobolev, D.I. ; Shmelyov, M.Yu.

Author_Institution

Inst. of Appl. Phys., Russian Acad. of Sci., Nizhny Novgorod

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

795

Lastpage

796

Abstract

A 30 GHz commutator aimed to switch phase of 0.1-1 mks, 1-100 MW microwaves in pulse compression systems like SLED is suggested. The commutator in a form of circular (100 mm) Si-disk put on a surface of copper mirror is based on creation of thin photoconductive layer in high purity low-loss silicon. The photoconductivity is caused by means of Ti:Sa laser radiation (1-10 mJ, 0.1 ps) with wavelength 795 nm. Results of low power tests carried out with the 180 degrees phase shifter, which was operated with Gaussian wavebeam, have showed high efficient phase switching for time ~1 ns. High-power tests are scheduled in CERN on the end of 2007.

Keywords

microwave phase shifters; optical phase shifters; optical pulse compression; photoconductivity; silicon; Gaussian wavebeam; Si; Ti:Sa laser radiation; commutators; frequency 30 GHz; induced photoconductivity; microwave phase switching; power 1 MW to 100 MW; pulse compression systems; quasi-optical phase shifter; thin photoconductive layer; wavelength 795 nm; Electromagnetic wave absorption; Masers; Mirrors; Optical pulse compression; Phase shifters; Photoconductivity; Pulse compression methods; Semiconductor lasers; Silicon; Testing; lasers; photoconductivity; pulse compressors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516735

Filename

4516735