Investigation of surface and guided wave polariton modes in doped GaN-AlxGa1−xN multi quantum wells

Author

Shayesteh, S. Farjami ; Parker, T.J.

Author_Institution

Dept. of Phys., Univ. of Guilan, Rasht

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

1021

Lastpage

1022

Abstract

In this work far infrared attenuated total reflection (ATR) spectroscopy in the Otto configuration has been used to investigate surface phonon-polaritons and guided wave polaritons in doped GaN-Al_xGa_1-xN MQW samples. The ATR spectra together with the field profiles and surface polariton dispersion enable the surface modes and guided modes to be identified in the p-polarization spectra.

Keywords

III-V semiconductors; aluminium compounds; attenuated total reflection; gallium compounds; polaritons; semiconductor quantum wells; wide band gap semiconductors; ATR spectra; GaN-Al_xGa_1-xN; MQW; Otto configuration; far infrared attenuated total reflection spectroscopy; guided wave polaritons; multi-quantum wells; surface phonon-polaritons; surface polariton dispersion; Gallium arsenide; Infrared spectra; Magnetic fields; Optical surface waves; Polarization mode dispersion; Quantum well devices; Reflection; Reflectivity; Spectroscopy; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516836

Filename

4516836