• DocumentCode
    474289
  • Title

    Why the Energy Levels Observed in Electrical Transport, Phototransport and Photoluminescence are Different?

  • Author

    Ciurea, M.L. ; Iancu, V.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Bucharest-Magurele
  • Volume
    1
  • fYear
    2007
  • fDate
    Oct. 15 2007-Sept. 17 2007
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    The paper presents an analysis of the electrical transport, phototransport and photoluminescence measurements performed on silicon-based nanocrystalline systems. The experimental results are discussed within the frame of a quantum confinement model. It is proved that the differences between the energy levels identified in the measurements are related to the quantum selection rules specific to each process. It is also proved that, at nanometric scale, the nature of the atoms composing the nanocrystal represents a first order correction, while the size represents a zero order factor.
  • Keywords
    electrical conductivity; elemental semiconductors; nanostructured materials; photoluminescence; silicon; Si; electrical transport measurement; nanocrystalline systems; photoluminescence measurement; phototransport measurement; quantum confinement model; Electrodes; Energy states; Nanocomposites; Oxidation; Performance evaluation; Photoconductivity; Photoluminescence; Potential well; Silicon; Wavelength measurement; electrical transport; nanocrystalline silicon; photoluminescence; phototransport; quantum confinement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2007. CAS 2007. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-0847-4
  • Type

    conf

  • DOI
    10.1109/SMICND.2007.4519643
  • Filename
    4519643