DocumentCode
474289
Title
Why the Energy Levels Observed in Electrical Transport, Phototransport and Photoluminescence are Different?
Author
Ciurea, M.L. ; Iancu, V.
Author_Institution
Nat. Inst. of Mater. Phys., Bucharest-Magurele
Volume
1
fYear
2007
fDate
Oct. 15 2007-Sept. 17 2007
Firstpage
41
Lastpage
44
Abstract
The paper presents an analysis of the electrical transport, phototransport and photoluminescence measurements performed on silicon-based nanocrystalline systems. The experimental results are discussed within the frame of a quantum confinement model. It is proved that the differences between the energy levels identified in the measurements are related to the quantum selection rules specific to each process. It is also proved that, at nanometric scale, the nature of the atoms composing the nanocrystal represents a first order correction, while the size represents a zero order factor.
Keywords
electrical conductivity; elemental semiconductors; nanostructured materials; photoluminescence; silicon; Si; electrical transport measurement; nanocrystalline systems; photoluminescence measurement; phototransport measurement; quantum confinement model; Electrodes; Energy states; Nanocomposites; Oxidation; Performance evaluation; Photoconductivity; Photoluminescence; Potential well; Silicon; Wavelength measurement; electrical transport; nanocrystalline silicon; photoluminescence; phototransport; quantum confinement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2007. CAS 2007. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-0847-4
Type
conf
DOI
10.1109/SMICND.2007.4519643
Filename
4519643
Link To Document