High-Performance 1.3 μm Dilute-Nitride Edge-Emitting Lasers

Author

Dumitrescu, M. ; Larsson, A. ; Wei, Y. ; Larkins, E. ; Uusimaa, P. ; Schulz, K. ; Pessa, M.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere

Volume

1

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

165

Lastpage

174

Abstract

The paper presents record performances achieved by dilute-nitride edge-emitting lasers developed in the EU-FP6 project FAST ACCESS. Some of the dilute-nitride material particularities together with epitaxial growth, post-growth treatment and laser structure issues are discussed. Record threshold current, slope efficiency, characteristic temperature, small- and large-signal modulation are presented, proving that the dilute-nitride GalnAsN lasers are a solution for low-cost un-cooled transmitters targeting the metropolitan and access area networks.

Keywords

III-V semiconductors; epitaxial growth; gallium arsenide; semiconductor lasers; EU-FP6 project; access area networks; dilute-nitride edge-emitting lasers; dilute-nitride materials; epitaxial growth; laser structure; metropolitan networks; post-growth treatment; slope efficiency; threshold currents; uncooled transmitters; Bonding; Capacitive sensors; Gallium arsenide; Lattices; Nitrogen; Optical materials; Optical transmitters; Surface emitting lasers; Temperature sensors; Vertical cavity surface emitting lasers; 10 Gb/s large-signal modulation; dilute-nitride; extended operating temperature range; high characteristic temperature; low threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519673

Filename

4519673