• DocumentCode
    474632
  • Title

    Carrier leakage in GaInNAsSb quantum well lasers

  • Author

    Ferguson, J.W. ; Smowton, P.M. ; Blood, P. ; Gupta, J.A. ; Aers, G.C.

  • Author_Institution
    Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We assess the non-radiative recombination mechanisms in GaInNAsSb structures by comparing p-doped, n-doped and un-doped material. Our results indicate a contribution from thermally activated leakage in 1.55 mum GaInNAsSb Quantum well lasers at elevated temperatures.
  • Keywords
    III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; GaInNAsSb; carrier leakage; non-radiative recombination; quantum well lasers; thermally activated leakage; wavelength 1.55 micron; Absorption; Current density; Doping; Energy measurement; Epitaxial layers; Gallium arsenide; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; 140.5960 (Semiconductor lasers); 250.0250 (Optoelectronics);
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4572263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=474632