GaAs-based buried heterostructure laser incorporating an InGaP opto-electronic confinement layer

Author

Groom, Kristian M. ; Alexander, Ryan R. ; Childs, David T D ; Krysa, Andrey B. ; Roberts, John S. ; Helmy, Amr S. ; Hogg, Richard A.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., Sheffield

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We demonstrate a novel process for fabrication of GaAs-based single lateral mode buried heterostructure lasers using a single epitaxial overgrowth in which an n-doped InGaP layer is utilized for both electrical and optical confinement.

Keywords

III-V semiconductors; epitaxial growth; epitaxial layers; gallium arsenide; indium compounds; optoelectronic devices; semiconductor lasers; GaAs; InGaP; electrical confinement; optical confinement; optoelectronic confinement layer; single epitaxial overgrowth; single lateral mode buried heterostructure laser; Gallium arsenide; Optical buffering; Optical device fabrication; Optical films; Optical refraction; Optical variables control; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; (250.5590) Quantum-well, -wire and -dot devices; (250.5960) Semiconductor Lasers;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572278