DocumentCode
474644
Title
High enhancement in light output of InGaN-based micro-hole array LEDs by photoelectrochemical (PEC) oxidation
Author
Lai, Fang-I ; Lin, S.G. ; Hsieh, C.E. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution
Dept. of Electr. Eng., Yuan-Ze Univ., Chung-Li
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; oxidation; photoelectrochemistry; wide band gap semiconductors; InGaN; current 20 mA; light emitting diodes; light output; microhole array LED; oxide-film; photoelectrochemical oxidation; Dry etching; Gallium nitride; Light emitting diodes; Optical arrays; Optical films; Optical reflection; Oxidation; Quantum well devices; Rough surfaces; Surface roughness; 230.3670; 310.6860;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572317
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