DocumentCode
474647
Title
Enhancing the light extraction of InGaN light-emitting diodes by patterning the dicing streets
Author
Lin, Hung-Cheng ; Tseng, Yen-Chun ; Chyi, Jen-Inn ; Lee, Chia-Ming
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum efficiency (EQE) of the LEDs at 20 mA increased by 12.9% because of the roughening of the passive region which enhanced the escape cone.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN-GaN; LED; dicing streets; external quantum efficiency; light emitting diodes; light extraction; multiple quantum wells; Epitaxial growth; Etching; Gallium nitride; Light emitting diodes; Optical waveguides; Power generation; Quantum well devices; Substrates; Temperature measurement; Voltage; (230.3670) Light-emitting diodes; (250.5590) Quantum-well, -wire and -dot devices;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572320
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