InGaN light emitters: A comparison of quantum dot and quantum well based devices

Author

Wu, Yuh-Renn ; Lin, Yih-Yin ; Singh, Jasprit

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

In this paper, we have studied the band structure of InGaN based quantum dot devices. The valence force field model and k middot p method have been applied to study the band structures in InGaN quantum dot devices including the piezoelectric polarization effects. A comparison with InGaN quantum wells shows that InGaN quantum dots can provide better e-h overlap and reduce the radiative lifetime. The dot size and the relation to the effective bandgap have been studied in this paper. The results suggest that InGaN quantum dots would have superior performance in white light emitters.

Keywords

III-V semiconductors; energy gap; gallium compounds; indium compounds; light emitting devices; quantum well devices; semiconductor quantum dots; wide band gap semiconductors; InGaN; band structure; bandgap; e-h overlap; k.p method; piezoelectric polarization effects; quantum dot devices; quantum wells; radiative lifetime; valence force field model; white light emitters; Capacitive sensors; Charge carrier processes; Gallium nitride; Lattices; Light emitting diodes; Photonic band gap; Piezoelectric polarization; Quantum computing; Quantum dots; Tensile strain; (230.3670) Light-emitting diodes; (250.5590)Quantum-well, -wire and -dot devices;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572325