All-optical injection, control, and detection of ballistic charge transport in semiconductors

Author

Smirl, Arthur L. ; Zhao, Hui ; Loren, Eric J. ; Van Driel, Henry M.

Author_Institution

Lab. for Photonics&Quantum Electron., Univ. of Iowa, Iowa City, IA

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Ballistic pure charge currents are injected into GaAs quantum wells using quantum interference techniques and are spatially and temporally resolved for the first time. The dynamics are dominated by momentum relaxation and space charge effects.

Keywords

III-V semiconductors; aluminium compounds; ballistic transport; charge injection; gallium arsenide; semiconductor quantum wells; space-charge-limited conduction; GaAs-Al_0.3Ga_0.7As; all-optical charge control; all-optical charge detection; all-optical charge injection; ballistic charge transport; momentum relaxation; quantum interference techniques; semiconductor quantum wells; space charge effects; Absorption; Charge carrier processes; Charge measurement; Current measurement; Gallium arsenide; Interference; Nonlinear optics; Pulse measurements; Quantum well devices; Spatial resolution; (190.5970) Semiconductor nonlinear optics; (320.7130) Ultrafast processes in condensed matter;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4572717