The HiSIM compact model family for integrated devices containing a surface-potential MOSFET core

HiSIM (Hiroshima university Starc Igfet Model) is the name of a surface-potential-based compact model for advanced sub-100nm scale MOSFET, which we are developing since more than a decade. HiSIM has evolved into one of the worlds leading MOSFET models for circuit simulation, practically applied by the semiconductor industry. More recently, the HiSIM approach of a consistently potential-based modeling has been successfully extended to a broad range of integrated devices which have a MOSFET core in common, including SOI-MOSFET (HiSIM-SOI), high-voltage MOSFET (HiSIM-HV), Insulated-Gate-Bipolar Transistor (HiSIM-IGBT), thin-film transistor (HiSIM-TFT), MOS varactor (HiSIM-VAR) and Double-Gate MOSFET (HiSIM-DG). The presentation will give an outline of the surface-potential-based solutions applied in the HiSIM compact model and the methods for consistently potential-based extensions to derive compact models for all integrated devices which contain a MOSFET core.