Modeling of high-voltage NMOS transistors using extended BSIM3 model

This paper presents a procedure for modeling and electrical parameter extraction of high-voltage NMOS transistors from the 1.2um CMOS/pressure sensor process. The well known and very robust Berkeley BSIM3 model was applied as a basis for modeling. Unfortunately BSIM3 does not include such specific high-voltage effects as drain extension, quasi-saturation and self-heating. In order to account for these effects in the modeling procedure, sub-circuit extension was implemented. All parameters were extracted with the IC-CAP automated test system. The model was implemented in SPECTRE and validated by simulating single devices and a ring oscillator.