Poly resistor modeling over a wide range of geometries and their different temperature and voltage behaviour for a HV CMOS process

This paper presents the characterization and modeling of poly resistors fabricated within a 0.35μm HV CMOS technology (Vmax ≪= 120V). For all investigations three diverse sheet resistances, 50 Ω/sq, 650 Ω/sq and 1200 Ω/sq are taken into account; which have in different temperature characteristics with positive, negative and low temperature coefficients. In addition the voltage dependence of voltage across the resistor and of backbiasing is modeled for different geometries up to the maximum allowed current density.