The l/f noise characteristics of a Schottky Junction Transistor: an ultra-low power, radiation hardened sub-threshold MESFET

Author

Anderson, R.J. ; Spann, J. ; Yang, J. ; Thornton, T.J.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ

Volume

4

fYear

2004

fDate

13-13 March 2004

Firstpage

2431

Lastpage

2436

Abstract

This paper is concerned with the 1/f noise characteristics of a new sub-threshold device configuration, the Schottky junction transistor (SJT). Results from 2 mum gate length SJTs confirm the expected sub-threshold d.c. behavior. Room temperature measurements of the drain current noise power spectrum and the gate referred noise power spectrum are presented. Although still not optimized the prototype SJTs demonstrate good low-frequency 1/f noise characteristics

Keywords

1/f noise; Schottky gate field effect transistors; electric noise measurement; low-power electronics; radiation hardening (electronics); semiconductor device measurement; semiconductor device noise; 1/f noise; 2 micron; 293 to 298 K; Schottky junction transistor; drain current noise power spectrum; gate referred noise power spectrum; low power MESFET; radiation hardened subthreshold MESFET; room temperature measurement; subthreshold d.c. characteristics; Capacitance; Low-frequency noise; MESFETs; MOSFET circuits; Noise measurement; Prototypes; Radiation hardening; Silicon on insulator technology; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace Conference, 2004. Proceedings. 2004 IEEE

Conference_Location

Big Sky, MT

ISSN

1095-323X

Print_ISBN

0-7803-8155-6

Type

conf

DOI

10.1109/AERO.2004.4620172

Filename

4620172