Temperature and interface traps compensation in MOS Bias Controlled Cycled Dosimeters

MOS dosimetry employing the Bias Controlled Cycled Measurement technique is investigated regarding its ability to compensate threshold voltage drifts superimposed to the signal, inducing measurement errors. Two sources of drifts were addressed: drifts due to interface states creation, and drifts due to temperature variations. The first case was measured and modeled; the second was numerically simulated using the same model. The results show that the good compensation observed for interface states creation would also occur for temperature induced drifts, reducing at least one order of magnitude the measurement error compared to non-compensated standard MOS dosimeters.