Correction algorithm for the proximity effect in e-beam lithography

e-beam lithography is a technique capable of fabricate sub-micrometer planar structures. The ultimate resolution in this technique is limited mainly by the proximity effect where the dose accumulated in one spacial point is affected by the irradiated dose in its neighborhood. The relevance of this effect in one particular pattern strongly depends on its geometry, the sensitivity of the resist and the physical characteristics of the substrate. In this work we present a numerical algorithm to calculate the nominal dose needed to be applied in each point of the geometry that results in an optimal net dose for an efficient pattern transfer.