DocumentCode
477178
Title
CDM ESD protection in CMOS integrated circuits
Author
Ker, Ming-Dou ; Hsiao, Yuan-Wen
Author_Institution
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu
fYear
2008
fDate
18-19 Sept. 2008
Firstpage
61
Lastpage
66
Abstract
The impacts of charged-device-model (CDM) electrostatic discharge (ESD) events on integrated circuit (IC) products are presented in this paper. The mechanism of chip-level CDM ESD event is introduced with some case studies on CDM ESD damages. Besides the chip-level CDM ESD event, the board-level CDM ESD event, which had been reported to cause damages in many customer-returned ICs, is also investigated in this work. The chip-level and board-level CDM ESD levels of several test devices and test circuits fabricated in CMOS processes are characterized and compared. The experimental results have shown that the board-level CDM ESD level of the test circuit is much lower than the chip-level CDM ESD level, which indicates that the board-level CDM ESD test is more critical than the chip-level CDM ESD test in the field applications. In addition, failure analysis reveals that the failure on the test circuit under board-level CDM ESD test is much severer than that under chip-level CDM ESD test.
Keywords
CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; CDM ESD protection; CMOS integrated circuits; board-level CDM ESD event; charged-device-model electrostatic discharge events; chip-level CDM ESD event; failure analysis; Biological system modeling; CMOS integrated circuits; CMOS process; CMOS technology; Circuit testing; Electrostatic discharge; Integrated circuit testing; Performance evaluation; Printed circuits; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro-Nanoelectronics, Technology and Applications, 2008. EAMTA 2008. Argentine School of
Conference_Location
Buenos Aires
Print_ISBN
978-987-655-003-1
Electronic_ISBN
978-987-655-003-1
Type
conf
Filename
4638978
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