Sequence nanosecond switch

An approach, which is based on propagation of the overvoltage in the chain of switching-type (threshold) elements, is proposed for development of distributed switches. The process essentially is the interaction of three dividing chains: the main chain is made up of switching-type elements triggered by voltage threshold crossing and two auxiliary chains including capacitive elements. Elements of the main and auxiliary capacitive dividing chains form circuits. Coupling of these circuits ensures propagation of the overvoltage in threshold elements. Switching-type elements, which are located on the switching wave front, form an electric field, whose intensity is two or more times higher than the initial intensity. A sequence switch made as a controlled high-current multi-gap high-pressure switch with a multi-spark nanosecond switching regime is described. Results of its experimental testing are reported. Closing of any threshold element changes the state of scheme, in which the overvoltage on the adjacent threshold elements is at the minimum twice initial voltage.