• DocumentCode
    47859
  • Title

    A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors

  • Author

    Chen Zhang ; Min Xu ; Ye, Peide D. ; Xiuling Li

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Illinois, Urbana, IL, USA
  • Volume
    34
  • Issue
    6
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    735
  • Lastpage
    737
  • Abstract
    By in-depth analysis of the electrical response of border traps in gate oxide, a new border-trap model is proposed where the ac charging and discharging current associated with those traps is proportional to the variation of the surface potential of semiconductors, resembling the behavior of transconductors. In contrast, the border trap current is directly related to the local potential in the gate oxide in the existing model. The model is then used to provide a qualitative understanding of the temperature-dependent frequency dispersion observed on the Al2O3/n-GaAs(111)A MOS capacitors at high positive bias.
  • Keywords
    III-V semiconductors; MOS capacitors; Al2O3-GaAs; III-V MOS capacitor; border traps; border-trap model; distributive-transconductance model; electrical response; gate oxide; high-k MOS capacitor; semiconductor; temperature-dependent frequency dispersion; transconductor; Border trap; III–V; MOS;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2255256
  • Filename
    6513297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=47859