Title :
Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors
Author :
Alles, Michael L. ; Hughes, Harold L. ; Ball, D.R. ; McMarr, Patrick J. ; Schrimpf, R.D.
Author_Institution :
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Measured results and 3D TCAD simulations demonstrate that narrow, long channel PDSOI devices may exhibit a total-ionizing-dose response more like FDSOI devices, attributable to regions of lighter body doping and trapped charge in the isolation regions.
Keywords :
elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; transistors; 3D TCAD simulations; FDSOI devices; PDSOI transistors; Si; TID response; fully depleted silicon-on-insulator; isolation regions; lighter body doping; partially depleted silicon-on-insulator; size 45 nm; total-ionizing-dose response; trapped charge; Design automation; Doping; Semiconductor process modeling; Silicon-on-insulator; Three-dimensional displays; Threshold voltage; Transistors; Long channel; narrow channel; partially-depleted SOI; total ionizing dose (TID);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2366725
