DocumentCode
47978
Title
Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors
Author
Alles, Michael L. ; Hughes, Harold L. ; Ball, D.R. ; McMarr, Patrick J. ; Schrimpf, R.D.
Author_Institution
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
Volume
61
Issue
6
fYear
2014
fDate
Dec. 2014
Firstpage
2945
Lastpage
2950
Abstract
Measured results and 3D TCAD simulations demonstrate that narrow, long channel PDSOI devices may exhibit a total-ionizing-dose response more like FDSOI devices, attributable to regions of lighter body doping and trapped charge in the isolation regions.
Keywords
elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; transistors; 3D TCAD simulations; FDSOI devices; PDSOI transistors; Si; TID response; fully depleted silicon-on-insulator; isolation regions; lighter body doping; partially depleted silicon-on-insulator; size 45 nm; total-ionizing-dose response; trapped charge; Design automation; Doping; Semiconductor process modeling; Silicon-on-insulator; Three-dimensional displays; Threshold voltage; Transistors; Long channel; narrow channel; partially-depleted SOI; total ionizing dose (TID);
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2366725
Filename
6962913
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