Low Phase Noise Oscillator at 60 GHz Stabilized by a Substrate Integrated Cavity Resonator in LTCC

Author

Dancila, Dragos ; Rottenberg, Xavier ; Tilmans, Harrie A. C. ; De Raedt, W. ; Huynen, Isabelle

Author_Institution

Angstrom Lab. Microwave Group, Uppsala Univ., Uppsala, Sweden

Volume

24

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

887

Lastpage

889

Abstract

In this letter, we report a low phase noise oscillator exhibiting state-of-the-art phase noise characteristics at 60 GHz. The oscillator is stabilized by an off-chip substrate integrated waveguide (SIW) cavity resonator, manufactured in LTCC technology. The area on top of the cavity resonator is used to flip-chip mount the MMIC, realized in SiGe technology. Measured oscillators discussed in this paper operate at frequencies of 59.91, 59.97, and 59.98 GHz. The measured phase noise at 1 MHz offset is -115.76 dBc/Hz, -115.92 dBc/Hz and -116.41 dBc/Hz, respectively. To our knowledge, the present hybrid oscillator has the lowest phase noise and highest figure of merit of integrated oscillators at V-band. The simulations are in very good agreement with the measured oscillation frequencies.

Keywords

MMIC oscillators; cavity resonators; ceramic packaging; flip-chip devices; phase noise; silicon compounds; substrate integrated waveguides; LTCC technology; MMIC; SIW cavity resonator; SiGe; flip-chip; frequency 59.91 GHz; frequency 59.97 GHz; frequency 59.98 GHz; frequency 60 GHz; hybrid oscillator; integrated oscillators; low phase noise oscillator; off-chip substrate integrated waveguide; oscillation frequencies; phase noise characteristics; substrate integrated cavity resonator; BiCMOS integrated circuits; Cavity resonators; MMICs; Phase noise; Resonant frequency; Substrates; BiCMOS; LTCC; V-band; oscillator; phase noise;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2361645

Filename

6930822