• DocumentCode
    4808
  • Title

    Mitigating Multi-Bit-Upset With Well-Slits in 28 nm Multi-Bit-Latch

  • Author

    Uemura, Toshifumi ; Kato, Toshihiko ; Matsuyama, Hiroki ; Hashimoto, Mime

  • Author_Institution
    Fujitsu Semicond. Ltd., Akiruno, Japan
  • Volume
    60
  • Issue
    6
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    4362
  • Lastpage
    4367
  • Abstract
    This paper proposes a technique that mitigates multi-bit-upset (MBU) in multi-bit-latch (MBL) without performance degradation by applying well-slits. The area overhead in an MBL macro for processor design, which includes a clock buffer and a checker, is only 5.4% in a 28 nm technology. Sixty-hour accelerated neutron irradiation test observed no MBUs in the MBL with well-slits. The proposed mitigation technique achieved excellent robustness against MBU without any increase in SBU rate. The MBL with the proposed mitigation technique helps improve reliability of electronic devices.
  • Keywords
    flip-flops; integrated circuit reliability; MBL macro; MBU mitigation; accelerated neutron irradiation test; checker; clock buffer; electronic devices reliability; multibit-latch; multibit-upset mitigation; processor design; size 28 nm; well-slits; Latches; Neutrons; Radiation effects; Single event transients; Single event upsets; Latch; multiple cell upset; neutron; single event; soft-error;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2288989
  • Filename
    6677623