DocumentCode
4808
Title
Mitigating Multi-Bit-Upset With Well-Slits in 28 nm Multi-Bit-Latch
Author
Uemura, Toshifumi ; Kato, Toshihiko ; Matsuyama, Hiroki ; Hashimoto, Mime
Author_Institution
Fujitsu Semicond. Ltd., Akiruno, Japan
Volume
60
Issue
6
fYear
2013
fDate
Dec. 2013
Firstpage
4362
Lastpage
4367
Abstract
This paper proposes a technique that mitigates multi-bit-upset (MBU) in multi-bit-latch (MBL) without performance degradation by applying well-slits. The area overhead in an MBL macro for processor design, which includes a clock buffer and a checker, is only 5.4% in a 28 nm technology. Sixty-hour accelerated neutron irradiation test observed no MBUs in the MBL with well-slits. The proposed mitigation technique achieved excellent robustness against MBU without any increase in SBU rate. The MBL with the proposed mitigation technique helps improve reliability of electronic devices.
Keywords
flip-flops; integrated circuit reliability; MBL macro; MBU mitigation; accelerated neutron irradiation test; checker; clock buffer; electronic devices reliability; multibit-latch; multibit-upset mitigation; processor design; size 28 nm; well-slits; Latches; Neutrons; Radiation effects; Single event transients; Single event upsets; Latch; multiple cell upset; neutron; single event; soft-error;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2013.2288989
Filename
6677623
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