SU-8 enhanced high power density MEMS inductors

Author

Wang, Mingliang ; Ngo, Khai D T ; Xie, Huikai

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL

fYear

2008

fDate

10-13 Nov. 2008

Firstpage

2672

Lastpage

2676

Abstract

Monolithic integration of DC-DC converters with on-chip inductors has emerged as a viable means to reduce size and increase transient performance for portable electronics applications. High-power-density inductors have been recognized as a barrier for such integration. In this paper, a CMOS-compatible process that is capable of fabricating on-chip inductors with low DC resistance and high power density is developed. A unique silicon molding technique is used to obtain thick electroplating layers for cores and windings. SU-8 is used as the isolation material between windings and cores. A pot-core inductor with a low-frequency inductance of 134 nH and a dc resistance of 9.1 mOmega has been demonstrated.

Keywords

CMOS integrated circuits; DC-DC power convertors; inductors; micromechanical devices; monolithic integrated circuits; moulding; windings; CMOS-compatible process; DC-DC converters; SU-8; electroplating layers; high power density MEMS inductors; isolation material; monolithic integration; on-chip inductors; pot-core inductor; silicon molding technique; Copper; DC-DC power converters; Etching; Inductance; Inductors; Magnetic cores; Micromechanical devices; Monolithic integrated circuits; Silicon; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 2008. IECON 2008. 34th Annual Conference of IEEE

Conference_Location

Orlando, FL

ISSN

1553-572X

Print_ISBN

978-1-4244-1767-4

Electronic_ISBN

1553-572X

Type

conf

DOI

10.1109/IECON.2008.4758379

Filename

4758379