DocumentCode
48239
Title
Effect of Metal Electrodes on Surface Acoustic Wave Properties in Bulk Z-Cut GaN Crystal
Author
Soluch, Waldemar ; Brzozowski, Ernest
Author_Institution
Dept. of Piezoelectronics, Inst. of Electron. Mater. Technol., Warsaw, Poland
Volume
61
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
3395
Lastpage
3398
Abstract
The effect of metal electrodes on surface acoustic wave (SAW) properties in bulk semi-insulating Z-cut GaN crystal was measured for the first time. A SAW synchronous two-port resonator was used for these measurements. Such SAW parameters as velocity, electromechanical coupling coefficient, and reflection coefficient of a single reflecting strip were determined by matching the measured and calculated amplitude responses of the resonator for aluminum and gold electrodes at a frequency of about 240 MHz. It was found that for gold electrodes, the reflection coefficient of a single reflecting strip is much larger compared with that of aluminum. Changes of resonance frequency against temperature were measured in the temperature range from -20 °C to 80 °C and linear temperature coefficient of frequency of about -23 ppm/°C was obtained. Isotropic SAW properties in the propagation plane, low temperature coefficient of frequency, and possibility of integration with active devices make the bulk Z-cut GaN crystal attractive for practical applications.
Keywords
aluminium; electrodes; gold; surface acoustic wave resonators; transfer functions; GaN; SAW synchronous two-port resonator; amplitude response; bulk semiinsulating Z-cut crystal; electromechanical coupling coefficient; linear temperature coefficient; metal electrodes; reflection coefficient; single reflecting strip; surface acoustic wave properties; temperature -20 degC to 80 degC; Aluminum; Crystals; Electrodes; Gallium nitride; Resonant frequency; Surface acoustic waves; Temperature measurement; Aluminum electrodes; bulk GaN crystal; gold electrodes; scattering matrix; surface acoustic wave; two-port synchronous resonator;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2337959
Filename
6884863
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