Nanocrystalline Diamond-Gated AlGaN/GaN HEMT

Author

Anderson, Travis J. ; Koehler, Andrew D. ; Hobart, Karl D. ; Tadjer, Marko J. ; Feygelson, Tatyana I. ; Hite, Jennifer K. ; Pate, Bradford B. ; Kub, Francis J. ; Eddy, Charles R.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

34

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

1382

Lastpage

1384

Abstract

Boron-doped p⁺ nanocrystalline diamond (NCD) films are implemented as heat spreading gate contacts to AlGaN/GaN high-electron-mobility transistors. This device demonstrates a reduced ON-resistance, reduced gate leakage, and significantly increased ON-state current density compared with the reference Ni/Au-gated devices from the same wafer. The NCD gate electrode is thermally stable, chemically stable, optically transparent, and places a heat spreading film in direct contact with the gate edge, which is the hottest part of the device.

Keywords

III-V semiconductors; aluminium compounds; boron; current density; diamond; gallium compounds; high electron mobility transistors; leakage currents; nanostructured materials; thermal stability; transparency; wide band gap semiconductors; AlGaN-GaN-C:B; ON-resistance; ON-state current density; boron-doped p± nanocrystalline diamond films; chemical stability; gate leakage; heat spreading gate contacts; high-electron-mobility transistors; nanocrystalline diamond-gated AlGaN/GaN HEMT; optical transparency; thermal stability; Aluminum gallium nitride; Diamonds; Gallium nitride; HEMTs; Heating; Logic gates; Thermal stability; Gallium nitride (GaN); high-electron-mobility transistor (HEMT); nanocrystalline diamond;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2282968

Filename

6630055