Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

Author

Griffoni, Alessio ; Tazzoli, Augusto ; Gerardin, Simone ; Simoen, Eddy ; Claeys, Cor ; Meneghesso, Gaudenzio

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padova

fYear

2008

fDate

7-11 Sept. 2008

Firstpage

59

Lastpage

66

Abstract

The ESD sensitivity of 65-nm fully depleted SOI MOSFETs (with thin silicon body) used as output buffer devices is studied. A detailed electrical investigation is carried out in order to classify the observed failure modes and mechanisms. We propose a new failure criterion that allows us to univocally identify the device failure. Finally, we analyze the impact of device geometry and strain engineering on the ESD sensitivity.

Keywords

MOSFET; electrostatic discharge; elemental semiconductors; internal stresses; silicon; silicon-on-insulator; Si; device geometry; electrostatic discharge; failure modes; fully depleted SOI MOSFET; size 65 nm; strain-inducing techniques; thin silicon body; ultra-thin gate oxide; CMOS technology; Capacitive sensors; Circuits; Electrostatic discharge; Geometry; MOSFETs; Protection; Silicon on insulator technology; Uniaxial strain; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th

Conference_Location

Tucson, AZ

Print_ISBN

978-1-58537-146-4

Electronic_ISBN

978-1-58537-147-1

Type

conf

Filename

4772115