DocumentCode
483360
Title
Process capability & transitional analysis
Author
Halperin, Stephen ; Gibson, Ronald ; Kinnear, John, Jr.
Author_Institution
Stephen Halperin & Assoc., Ltd., Bensenville, IL
fYear
2008
fDate
7-11 Sept. 2008
Firstpage
148
Lastpage
157
Abstract
A new approach analyzes the manufacturing critical path, defining locations of charge generation and discharge, and types of device ESD failure mechanisms experienced in the process. The technique identifies the device sensitivities a process is capable of handling in relation to HBM, CDM, field induction and machine model failure thresholds.
Keywords
electrostatic discharge; failure analysis; manufacturing processes; process capability analysis; semiconductor device manufacture; CDM; HBM; charge generation; charged device model; device ESD failure mechanism; field induction; human body model; machine model failure threshold; manufacturing critical path; process capability analysis; process transitional analysis; Assembly; Circuit testing; Conducting materials; Electronic switching systems; Electrostatic discharge; Failure analysis; Manufacturing processes; Poles and towers; Process control; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2008. EOS/ESD 2008. 30th
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-146-4
Electronic_ISBN
978-1-58537-147-1
Type
conf
Filename
4772127
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