Monolithic Integration of Trench Power JFET with Schottky Diode

Author

Gao, Yang ; Chen, Jie ; Huang, Alex Q.

Author_Institution

Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC

Volume

1

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

4

Abstract

A monolithic integration of trench power JFET with Schottky diode is proposed and analyzed. A unit JFET cell pitch of 1.1 um can be obtained. The specific on-resistance of the device is reduced to 14.4 mOmegamiddotmm² which is close to state-of-art of power MOSFET. Two approaches for the integrated Schottky diode -junction barrier Schottky (JBS) and planar Schottky diode (PSD) - are analyzed and compared. The integrated JBS diode shows 28% and 30% reduction while the integrated PSD shows 30% and 32% reduction on forward voltage drop and reverse recovery charge respectively compared with its p-n counterpart from the same integration technology

Keywords

Schottky diodes; junction gate field effect transistors; power field effect transistors; power semiconductor diodes; JBS; PSD; forward voltage drop; integrated junction barrier Schottky diode; integrated planar Schottky diode; integration technology; monolithic integration; power MOSFET; reverse recovery charge; specific on-resistance; trench power JFET; Computer science; Educational institutions; Leakage current; MOSFET circuits; Monolithic integrated circuits; Power electronics; Power engineering and energy; Schottky diodes; Switches; Voltage; JFET; monolithic; power; schottky diode; trench;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4777958

Filename

4777958