Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

Author

Rantamaki, Antti ; LyytikaInen, J. ; Heikkinen, Juuso ; Kontio, Juha M. ; Okhotnikov, Oleg G.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland

Volume

25

Issue

22

fYear

2013

fDate

Nov.15, 2013

Firstpage

2233

Lastpage

2235

Abstract

We present wafer bonding techniques applied for the first time in integrating GaAs-based distributed Bragg reflectors (DBRs) with InP-based active regions in optically pumped semiconductor disk lasers. The bonding procedures are performed at a modest temperature of 200 ^°C and enable multi-watt output powers from 1.3 μm semiconductor disk lasers. These technologies are critical for vertical-cavity lasers emitting in the range 1.3-1.6 μm since monolithically grown lattice-matched InP structures suffer from DBRs with low refractive index contrast and poor thermal conductivity when compared with GaAs-based DBRs.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical pumping; refractive index; semiconductor lasers; surface emitting lasers; thermal conductivity; wafer bonding; DBR; GaAs; GaAs-based distributed Bragg reflectors; InP; InP-based active regions; low refractive index contrast; low-temperature wafer bonding; multiwatt semiconductor disk laser; optical pumping; temperature 200 degC; thermal conductivity; vertical-cavity lasers; wavelength 1.3 mum to 1.6 mum; Bonding; Materials; Pump lasers; Vertical cavity surface emitting lasers; Wafer bonding; Low temperature wafer bonding; molecular beam epitaxy (MBE); semiconductor disk laser (SDL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2284920

Filename

6630064