Noise Analysis and Optimization of Terahertz Photoconductive Emitters

Author

Lei Hou ; Wei Shi ; Suguo Chen

Author_Institution

Dept. of Appl. Phys., Xian Univ. of Technol., Xian, China

Volume

19

Issue

1

fYear

2013

fDate

Jan.-Feb. 2013

Firstpage

8401305

Lastpage

8401305

Abstract

The electromagnetic noise generated by terahertz photoconductive emitters was investigated, and the intensity of noise spectrum was analyzed by statistical method. The relationship between the noise of the emitter and the resistivity as well as carrier lifetime of the antenna material was obtained. And the effect of carrier lifetime and mobility of antennas on the THz generation efficiency was investigated. Based on those results, GaAs:O material was fabricated by an ion implantation technique to obtain the required performance. The signal-to-noise ratio of the GaAs:O emitter was remarkably improved compared with a SI-GaAs emitter at the same experimental condition.

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; electrical resistivity; gallium arsenide; ion implantation; noise; oxygen; photoconducting devices; photoconductivity; statistical analysis; submillimetre wave antennas; terahertz wave devices; terahertz wave generation; GaAs:O; THz generation efficiency; antenna material; carrier lifetime; carrier mobility; electromagnetic noise; ion implantation technique; noise analysis; noise spectrum; optimization; resistivity; signal-to-noise ratio; statistical method; terahertz photoconductive emitters; Antennas; Charge carrier lifetime; Gallium arsenide; Laser excitation; Signal to noise ratio; GaAs:O; Photoconductive antenna; signal-to-noise ratio (SNR); terahertz;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2012.2188781

Filename

6156513