DocumentCode
48667
Title
An Alternative One-Diode Model for Illuminated Solar Cells
Author
Breitenstein, O.
Author_Institution
Max Planck Inst. of Microstructure Phys., Halle, Germany
Volume
4
Issue
3
fYear
2014
fDate
May-14
Firstpage
899
Lastpage
905
Abstract
A novel one-diode model is proposed for illuminated solar cells, which contains an additional variable resistance describing minority carrier diffusion from the bulk to the p-n junction. This model naturally describes the differences between photo- and electroluminescence imaging, as well as a well-known departure from the superposition principle.
Keywords
diffusion; electroluminescence; minority carriers; p-n junctions; photoluminescence; solar cells; electroluminescence imaging; illuminated solar cells; minority carrier diffusion; novel one-diode model; p-n junction; photoluminescence; superposition principle; variable resistance; Imaging; Integrated circuit modeling; Lighting; P-n junctions; Photovoltaic cells; Resistance; Spontaneous emission; Electroluminescence (EL) imaging; one-diode model; photoluminescence (PL) imaging; solar cell modeling; superposition principle;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2014.2309796
Filename
6777531
Link To Document